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Title: Theoretical simulation of carrier capture and relaxation rates in quantum-dot semiconductor optical amplifiers

Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup −1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.
Authors:
 [1] ;  [2] ;  [1] ; ;  [3] ;  [4]
  1. College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China)
  2. (China)
  3. Department of Physics, Kashi Normal College, Kashi 844006 (China)
  4. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)
Publication Date:
OSTI Identifier:
22304191
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLIFIERS; AUGER EFFECT; CAPTURE; CARRIER DENSITY; CARRIERS; COULOMB SCATTERING; CURRENTS; DISTRIBUTION; EFFECTIVE MASS; EXCITED STATES; GROUND STATES; HOLES; LAYERS; OPTICS; QUANTUM DOTS; RELAXATION; SEMICONDUCTOR MATERIALS; SIMULATION; STEADY-STATE CONDITIONS