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Title: Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO{sub 2} interfaces and their incorporation into SiO{sub 2}

Dynamics of Si(100)-oxidation processes at the Si/SiO{sub 2} interface and in the SiO{sub 2} region are investigated focusing on SiO and Si emissions from the interface and the following incorporation into the SiO{sub 2} and/or substrate. Classical molecular dynamics (MD) simulations with variable charge interatomic potentials are performed to clarify these atomic processes. By incorporating oxygen atoms, two-folded Si atoms are formed after structural relaxation at the interface and are emitted as SiO molecules into SiO{sub 2}. The energy barrier of the SiO emission is estimated to be 1.20 eV on the basis of the enthalpy change in an MD simulation. The emitted SiO molecule is incorporated into the SiO{sub 2} network through a Si-O rebonding process with generating an oxygen vacancy. The energy barrier of the SiO incorporation is estimated to be 0.79–0.81 eV. The elementary process of oxygen vacancy diffusion leading to the complete SiO incorporation is also simulated, and the energy barriers are found to be relatively small, 0.71–0.79 eV. The energy changes of Si emissions into the substrate and SiO{sub 2} are estimated to be 2.97–7.81 eV, which are larger than the energy barrier of the SiO emission. This result suggests that, at the ideally flat Si/SiO{sub 2} interface, themore » SiO emission into the SiO{sub 2} region occurs prior to the Si emission, which is consistent with previous theoretical and experimental studies. The above mentioned typical atomic processes are successfully extracted from some (or one) of MD simulations among many trials in which a statistical procedure is partly employed. Our results give a unified understanding of Si oxidation processes from an atomistic point of view.« less
Authors:
; ;  [1]
  1. Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197 (Japan)
Publication Date:
OSTI Identifier:
22304178
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; DIFFUSION BARRIERS; EMISSION; ENTHALPY; EV RANGE; INTERFACES; MOLECULAR DYNAMICS METHOD; OXIDATION; OXYGEN; RELAXATION; SILICON; SILICON OXIDES; SIMULATION; SUBSTRATES; VACANCIES