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Title: Electrical and optical characterization of Au/CaF{sub 2}/p-Si(111) tunnel-injection diodes

Metal/CaF{sub 2}/p-Si(111) capacitors with the improved-quality several-nanometer-thick epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for barrier layers in silicon devices. Structural and transport properties of a thin crystalline dielectric are characterized by different experimental techniques. The measured current-voltage characteristics accompanied with simulation results demonstrate that the elastic tunneling electron injection takes place in the considered structures. The same result follows from the behavior of hot-electron-injection-related electroluminescence within the selected spectral intervals. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes.
Authors:
 [1] ;  [2] ;  [3] ; ; ; ;  [4]
  1. Singapore Institute of Manufacturing Technology, 71 Nanyang Drive 638075 (Singapore)
  2. (Russian Federation)
  3. (Austria)
  4. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya Str., 194021 St.-Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22304172
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CALCIUM FLUORIDES; CAPACITORS; DEPLETION LAYER; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTROLUMINESCENCE; ELECTRON BEAM INJECTION; EPITAXY; FILMS; GOLD; HETEROJUNCTIONS; INJECTION; OPTICAL PROPERTIES; P-TYPE CONDUCTORS; SILICON; SIMULATION; TUNNEL DIODES; TUNNEL EFFECT