Direct growth of graphene on Si(111)

Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken; Campos-Delgado, Jessica; Raskin, Jean-Pierre; Hackens, Benoît; Santos, Cristiane N.

doi:10.1063/1.4882181

Title: Direct growth of graphene on Si(111)

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Abstract

Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

Authors:

Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken ^[1]; Campos-Delgado, Jessica; Raskin, Jean-Pierre ^[2]; Hackens, Benoît; Santos, Cristiane N. ^[3]

Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium)
Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium)
Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

Publication Date:: Sat Jun 14 00:00:00 EDT 2014

OSTI Identifier:: 22304170

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 115; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; CURRENTS; DEPOSITION; ELECTRON BEAMS; ELECTRON DIFFRACTION; GRAPHENE; NANOSTRUCTURES; PHOTOEMISSION; RAMAN SPECTROSCOPY; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; X RADIATION

Citation Formats


                    Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be, Joucken, Frédéric, Colomer, Jean-François, Robert, Sporken, Campos-Delgado, Jessica, Raskin, Jean-Pierre, Hackens, Benoît, and Santos, Cristiane N. Direct growth of graphene on Si(111).  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4882181.

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                    Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be, Joucken, Frédéric, Colomer, Jean-François, Robert, Sporken, Campos-Delgado, Jessica, Raskin, Jean-Pierre, Hackens, Benoît, & Santos, Cristiane N. Direct growth of graphene on Si(111).  United States.  https://doi.org/10.1063/1.4882181

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                    Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be, Joucken, Frédéric, Colomer, Jean-François, Robert, Sporken, Campos-Delgado, Jessica, Raskin, Jean-Pierre, Hackens, Benoît, and Santos, Cristiane N. 2014.  
        "Direct growth of graphene on Si(111)".  United States.  https://doi.org/10.1063/1.4882181.

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@article{osti_22304170,

  title        = {Direct growth of graphene on Si(111)},

  author       = {Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be and Joucken, Frédéric and Colomer, Jean-François and Robert, Sporken and Campos-Delgado, Jessica and Raskin, Jean-Pierre and Hackens, Benoît and Santos, Cristiane N.},

  abstractNote = {Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.},

  doi          = {10.1063/1.4882181},

  url          = {https://www.osti.gov/biblio/22304170},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 22,

  volume       = 115,

  place        = {United States},

  year         = {Sat Jun 14 00:00:00 EDT 2014},

  month        = {Sat Jun 14 00:00:00 EDT 2014}

}

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