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Title: Effect of Z{sub 1/2}, EH{sub 5}, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z{sub 1/2}, EH{sub 5}, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z{sub 1/2} defects was found to be 1.7 × 10{sup 13} cm{sup −3}. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region ofmore » the detector. The 10 mm{sup 2} large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.« less
Authors:
; ; ;  [1]
  1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States)
Publication Date:
OSTI Identifier:
22304140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALPHA SPECTROSCOPY; CAPACITANCE; CHARGE CARRIERS; CHARGE COLLECTION; CHARGE TRANSPORT; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION BARRIERS; EFFICIENCY; ELECTRIC CONTACTS; EPITAXY; EV RANGE; IMPURITIES; LAYERS; LEAKAGE CURRENT; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDES; TITANIUM; TRAPS