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Title: In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9 eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.
Authors:
; ;  [1] ;  [2] ; ;  [3]
  1. Department of Material Sciences, Institut Pprime (UPR 3346), CNRS, Université de Poitiers, ENSMA, BP30179, 86962 Futuroscope Chasseneuil (France)
  2. CSNSM, CNRS—Université Paris-Sud, Bâtiment 108, Orsay (France)
  3. School of Computing and Engineering, University of Huddersfield, Huddersfield HD1 3DH (United Kingdom)
Publication Date:
OSTI Identifier:
22304121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ACTIVATION ENERGY; COALESCENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; EV RANGE; HELIUM; HYDROGEN; INTERACTIONS; SILICON; STRESS CORROSION; STRESSES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; YIELD STRENGTH