Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in Al{sub x}Ga{sub 1−x}N/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]
Journal Article
·
· Journal of Applied Physics
- Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)
No abstract prepared.
- OSTI ID:
- 22304056
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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