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Title: Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in Al{sub x}Ga{sub 1−x}N/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

No abstract prepared.
Authors:
;  [1]
  1. Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)
Publication Date:
OSTI Identifier:
22304056
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ELECTRON GAS; GALLIUM NITRIDES; HETEROJUNCTIONS; POTENTIALS; RELAXATION; STRAINS; SURFACES; TWO-DIMENSIONAL CALCULATIONS