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Title: Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.
Authors:
; ;  [1] ; ;  [2]
  1. Physics Department, Simon Fraser University, 8888 University Dr, Burnaby, British Columbia V5A-3Y1 (Canada)
  2. Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada)
Publication Date:
OSTI Identifier:
22304024
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE TRANSPORT; DISLOCATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FERMI LEVEL; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; NANOWIRES; PASSIVATION; PHOTOLUMINESCENCE; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; STRAINS; SURFACES; TELLURIUM ADDITIONS; VAPOR PHASE EPITAXY