skip to main content

SciTech ConnectSciTech Connect

Title: Metallic behavior and negative differential resistance properties of (InAs){sub n} (n = 2 − 4) molecule cluster junctions via a combined non–equilibrium Green's function and density functional theory study

In this present work, the geometric structures and electronic transport properties of (InAs){sub n} (n = 2, 3, 4) molecule cluster junctions are comparatively investigated using NEGF combined with DFT. Results indicate that all (InAs){sub n} molecule cluster junctions present metallic behavior at the low applied biases ([−2V, 2V]), while NDR appears at a certain high bias range. Our calculation shows that the current of (InAs){sub 4} molecule cluster–based junction is almost the largest at any bias. The mechanisms of the current–voltage characteristics of all the three molecule cluster junctions are proposed.
Authors:
; ;  [1] ; ; ;  [1] ;  [2]
  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22304006
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; EQUILIBRIUM; GREEN FUNCTION; INDIUM ARSENIDES; MOLECULAR CLUSTERS; MOLECULES; SEMICONDUCTOR JUNCTIONS