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Title: Bilayer graphene quantum dot defined by topgates

We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
Authors:
; ; ; ; ;  [1]
  1. Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)
Publication Date:
OSTI Identifier:
22304004
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC CONDUCTIVITY; GRAPHENE; LAYERS; OSCILLATIONS; PIEZOELECTRICITY; QUANTUM DOTS; STRAINS; TEMPERATURE RANGE 0000-0013 K