Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

Journal Article · Sat Jun 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4883998· OSTI ID:22303988

Will, J.; Bergmann, C.; Magerl, A. ^[1]

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1. Crystallography and Structural Physics, University of Erlangen-Nürnberg, Staudtstr. 3, 91058 Erlangen (Germany)

Annealed Czochralski Silicon wafers containing SiO{sub x} precipitates have been studied by high energy X-ray diffraction in a defocused Laue setup using a laboratory tungsten tube. The energy dispersive evaluation of the diffracted Bragg intensity of the 220 reflection within the framework of the statistical dynamical theory yields the static Debye-Waller factor E of the crystal, which gives access to the strain induced by the SiO{sub x} precipitates. The results are correlated with precipitate densities and sizes determined from transmission electron microscopy measurements of equivalent wafers. This allows for the determination of the constrained linear misfit ε between precipitate and crystal lattice. For samples with octahedral precipitates the values ranging from ε = 0.39 (+0.28/−0.12) to ε = 0.48 (+0.34/−0.16) indicate that self-interstitials emitted into the matrix during precipitate growth contribute to the lattice strain. In this case, the expected value calculated from literature values is ε = 0.26 ± 0.05. Further, the precise evaluation of Pendellösung oscillations in the diffracted Bragg intensity of as-grown wafers reveals a thermal Debye-Waller parameter for the 220 reflection B{sup 220}(293 K) of 0.5582 ± 0.0039 Å{sup 2} for a structure factor based on spherically symmetric scattering contributions.

• OSTI ID: 22303988
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTALS
CZOCHRALSKI METHOD
DEBYE-WALLER FACTOR
EMISSION
INTERSTITIALS
OSCILLATIONS
OXYGEN
PRECIPITATION
REFLECTION
SILICON
SILICON OXIDES
SPHERICAL CONFIGURATION
STRAINS
STRUCTURE FACTORS
SYMMETRY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION