skip to main content

SciTech ConnectSciTech Connect

Title: Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12} cm{sup −2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate themore » formation of defects and a modification of the growth process induced by nitrogen doping.« less
Authors:
; ;  [1] ; ;  [2] ; ;  [3] ;  [4] ;  [1] ;  [5]
  1. Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland)
  2. Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw (Poland)
  3. Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland)
  4. Faculty of Physics and Applied Informatics, University of Łódź, ul. Pomorska 149/153, 90-236 Łódź (Poland)
  5. (Poland)
Publication Date:
OSTI Identifier:
22303985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECTS; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; GRAPHENE; GRAPHITE; HALL EFFECT; INTERACTIONS; NITROGEN ADDITIONS; OPTICAL PROPERTIES; PHOTOEMISSION; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SILICON CARBIDES; SUBSTRATES; X-RAY PHOTOELECTRON SPECTROSCOPY