Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

Journal Article · Sat Jun 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4884015· OSTI ID:22303985

Urban, J. M.; Binder, J.; Wysmołek, A. ^[1]; Dąbrowski, P.; Strupiński, W. ^[2]; Kopciuszyński, M.; Jałochowski, M. ^[3]; Klusek, Z. ^[4]; Baranowski, J. M. ^[1]

---

1. Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland)
2. Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw (Poland)
3. Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland)
4. Faculty of Physics and Applied Informatics, University of Łódź, ul. Pomorska 149/153, 90-236 Łódź (Poland)

We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12} cm{sup −2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

• OSTI ID: 22303985
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEFECTS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
GRAPHENE
GRAPHITE
HALL EFFECT
INTERACTIONS
NITROGEN ADDITIONS
OPTICAL PROPERTIES
PHOTOEMISSION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SILICON CARBIDES
SUBSTRATES
X-RAY PHOTOELECTRON SPECTROSCOPY