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Title: Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates

The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [1] ;  [3]
  1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan)
  2. Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22303979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CARRIERS; CONVERSION; CRYSTAL GROWTH; CRYSTALS; GALLIUM ARSENIDES; IMPURITIES; INDIUM COMPOUNDS; MODULATION; PHOSPHORUS COMPOUNDS; QUANTUM WELLS; SOLAR CELLS; SUBSTRATES; THICKNESS; VAPOR PHASE EPITAXY; VISIBLE RADIATION