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Title: C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-H surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.
Authors:
 [1] ;  [2] ;  [2] ; ; ; ; ; ;  [1] ;  [3]
  1. Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
  2. (Japan)
  3. Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
Publication Date:
OSTI Identifier:
22303964
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BORON ADDITIONS; BREAKDOWN; CURRENT DENSITY; CURRENTS; DIAMONDS; DOPED MATERIALS; ELECTRIC POTENTIAL; GALLIUM NITRIDES; METALS; MOSFET; OXIDIZERS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SURFACES; TEMPERATURE RANGE 0400-1000 K; WATER