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Title: Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Optically more stable, high mobility InGaZnO thin film transistors were fabricated by implementing ultrathin In{sub 2}O{sub 3}-SnO{sub 2} (ITO) layers at the gate dielectric/semiconductor interface. The optimized device portrayed a high saturation mobility of ∼80 cm{sup 2}/V s with off current values lower than 10{sup −11}A. The ITO layer also acted as a hole filter layer, and hole current and threshold voltage shift values measured under negative bias illumination conditions showed that a significant amount of photo-generated charge carriers were annihilated before reaching the gate insulator. This effect was more evident at larger intensities, showing threshold voltage shift values reduced by more than ∼70% under stress conditions.
Authors:
 [1] ;  [2] ; ; ;  [1]
  1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22303963
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHARGE CARRIERS; CURRENTS; DIELECTRIC MATERIALS; FILTERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM OXIDES; INTERFACES; LAYERS; SATURATION; SEMICONDUCTOR MATERIALS; STABILITY; STRESSES; THIN FILMS; TIN OXIDES; TRANSISTORS; ZINC OXIDES