Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics
We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz{sup 1∕2} and 20 aA/Hz{sup 1∕2}, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.
- OSTI ID:
- 22303961
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device
White noise of Nb-based microwave superconducting quantum interference device multiplexers with NbN coplanar resonators for readout of transition edge sensors
Journal Article
·
Mon Feb 08 00:00:00 EST 2016
· Applied Physics Letters
·
OSTI ID:22303961
+6 more
Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device
Journal Article
·
Thu May 15 00:00:00 EDT 2014
· Review of Scientific Instruments
·
OSTI ID:22303961
+1 more
White noise of Nb-based microwave superconducting quantum interference device multiplexers with NbN coplanar resonators for readout of transition edge sensors
Journal Article
·
Sat Jun 14 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22303961
+3 more