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Title: Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz{sup 1∕2} and 20 aA/Hz{sup 1∕2}, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.
Authors:
; ; ; ; ; ;  [1]
  1. CNRS, Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis (France)
Publication Date:
OSTI Identifier:
22303961
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; IMPEDANCE; LEAKAGE CURRENT; NOISE; READOUT SYSTEMS; TEMPERATURE RANGE 0000-0013 K; TRANSISTORS