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Title: SnTe field effect transistors and the anomalous electrical response of structural phase transition

SnTe is a conventional thermoelectric material and has been newly found to be a topological crystalline insulator. In this work, back-gate SnTe field-effect transistors have been fabricated and fully characterized. The devices exhibit n-type transistor behaviors with excellent current-voltage characteristics and large on/off ratio (>10{sup 6}). The device threshold voltage, conductance, mobility, and subthreshold swing have been studied and compared at different temperatures. It is found that the subthreshold swings as a function of temperature have an apparent response to the SnTe phase transition between cubic and rhombohedral structures at 110‚ÄČK. The abnormal and rapid increase in subthreshold swing around the phase transition temperature may be due to the soft phonon/structure change which causes the large increase in SnTe dielectric constant. Such an interesting and remarkable electrical response to phase transition at different temperatures makes the small SnTe transistor attractive for various electronic devices.
Authors:
; ; ;  [1] ;  [2] ; ;  [1] ;  [3] ;  [4]
  1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
  2. (United States)
  3. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  4. School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, Virginia 22030 (United States)
Publication Date:
OSTI Identifier:
22303960
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; N-TYPE CONDUCTORS; PERMITTIVITY; PHASE TRANSFORMATIONS; PHONONS; TEMPERATURE DEPENDENCE; THERMOELECTRIC MATERIALS; TIN TELLURIDES; TOPOLOGY; TRANSITION TEMPERATURE; TRIGONAL LATTICES