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Title: Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6130 (United States)
Publication Date:
OSTI Identifier:
22303953
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; DEPLETION LAYER; ELECTRIC CONDUCTIVITY; FILTERS; HETEROJUNCTIONS; SATURATION; SEMICONDUCTOR MATERIALS; SIMULATION; TRANSISTORS; TUNNEL EFFECT