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Title: Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm{sup 2} V{sup −1} s{sup −1} at room temperature to 49 000 cm{sup 2} V{sup −1} s{sup −1} at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.
Authors:
; ; ; ;  [1]
  1. Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands)
Publication Date:
OSTI Identifier:
22303948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CARRIER MOBILITY; CRYSTALS; FABRICATION; GRAPHENE; LAYERS; TEMPERATURE RANGE 0273-0400 K