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Title: GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.
Authors:
 [1]
  1. NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)
Publication Date:
OSTI Identifier:
22303931
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CARRIERS; CAVITY RESONATORS; DISTRIBUTION; GALLIUM NITRIDES; HEATING; LASER RADIATION; P-N JUNCTIONS; QUANTUM WELLS; RECYCLING; SURFACES; THERMAL CONDUCTIVITY; TUNNEL EFFECT; VISIBLE RADIATION