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Title: Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

We reported the study on the photoluminescence internal quantum efficiency (PL IQE) and external quantum efficiency (PL EQE) from the amorphous silicon oxynitride (a-SiNO) films, which were fabricated by plasma-enhanced chemical vapor deposition followed by in situ plasma oxidation. We employed the direct measurement of absolute quantum efficiency within a calibrated integration sphere to obtain the PL EQE. Then, we calculated the PL IQE by combing the measured EQE and optical parameters of light extraction factor, reflectivity, and transmittance of the a-SiNO thin films. We also derived the PL QE through investigating the characteristic of the temperature dependent PL. These results show that the PL IQE as high as 60% has been achieved at peak wavelength of about 470 nm, which is much higher than that of Si nanocrystal embedded thin films.
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [1] ;  [3]
  1. State Key Laboratory of Solid State Microstructures and School of Electron Science and Engineering, Nanjing University, Nanjing 210093 (China)
  2. (China)
  3. Taizhou Institute of Science and Technology, Nanjing University of Science and Technology, Taizhou 225300 (China)
Publication Date:
OSTI Identifier:
22303928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CHEMICAL VAPOR DEPOSITION; EXTRACTION; NANOSTRUCTURES; OXIDATION; PHOTOLUMINESCENCE; PLASMA; QUANTUM EFFICIENCY; REFLECTIVITY; SILICON; TEMPERATURE DEPENDENCE; THIN FILMS; VISIBLE RADIATION; WAVELENGTHS