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Title: Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).
Authors:
; ; ; ; ; ; ;  [1] ; ; ;  [2] ;  [2] ;  [3]
  1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France)
  2. ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France)
  3. (France)
Publication Date:
OSTI Identifier:
22303925
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; COMPUTERIZED SIMULATION; ELECTRIC FIELDS; EQUIPMENT; GAIN; GALLIUM ARSENIDES; GOLD; INCIDENCE ANGLE; INTERFACES; LAYERS; NANOSTRUCTURES; PHOTONS; P-N JUNCTIONS; RESONATORS; VISIBLE RADIATION