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Title: Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.
Authors:
;  [1] ;  [2] ; ;  [1] ;  [3] ; ;  [4] ; ;  [5]
  1. Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
  2. Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, 701 Tainan, Taiwan (China)
  3. (China)
  4. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
  5. Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping (Sweden)
Publication Date:
OSTI Identifier:
22303924
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; DENSITY; EPITAXY; EXCITONS; FILMS; PHOTOLUMINESCENCE; QUANTUM WELLS; RECOMBINATION; SPATIAL DISTRIBUTION; STACKING FAULTS; TIME RESOLUTION; ZINC OXIDES