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Title: Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. Institut d'Electronique Fondamentale, CNRS - Univ. Paris Sud 11, Bâtiment 220, F-91405 Orsay (France)
  2. Univ. Grenoble Alpes, INAC-SP2M, CEA-CNRS group “Nanophysique et Semiconducteurs,” F-38000 Grenoble (France)
  3. (France)
  4. Université Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34905 Montpellier (France)
  5. CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne (France)
Publication Date:
OSTI Identifier:
22303922
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CAVITY RESONATORS; CRYSTALS; GALLIUM NITRIDES; HOLES; LOSSES; NEAR INFRARED RADIATION; PERIODICITY; QUALITY FACTOR; RESONANCE; SILICON; SUBSTRATES; TRANSMISSION