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Title: Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104, 202101 (2014)]

No abstract prepared.
Authors:
; ; ;  [1] ;  [2]
  1. School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China)
  2. State Key Laboratory of Material Modification by Laser, Ion and Electron Beam (Ministry of Education), Dalian University of Technology, Dalian 116024 (China)
Publication Date:
OSTI Identifier:
22303919
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; HYDROGEN IONS; NITROGEN IONS; PASSIVATION; PLASMA; SILICON CARBIDES; SURFACES