Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan)
We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T{sub body}) scaling provides better short channel effect (SCE) control, whereas the T{sub body} scaling also causes the reduction of the mobility limited by channel thickness fluctuation (δT{sub body}) scattering (μ{sub fluctuation}). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T{sub channel}) scaling is more favorable than the thickness of MOS interface buffer layer (T{sub buffer}) scaling from a viewpoint of a balance between SCEs control and μ{sub fluctuation} reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.
- OSTI ID:
- 22303913
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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