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Title: Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

A memory device p-Si/SiO{sub 2}/(TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1}(TAO-81)/Al{sub 2}O{sub 3}/Pt was fabricated, in which a composite of two high-k dielectrics with a thickness of 1 nm was employed as the charge-trapping layer to enhance the charge-trapping efficiency of the memory device. At an applied gate voltage of ±9 V, TAO-81 memory device shows a memory window of 8.83 V in its C-V curve. It also shows a fast response to a short voltage pulse of 10{sup −5} s. The charge-trapping capability, the endurance, and retention characteristics of TAO-81 memory device can be improved by introducing double TAO-81 charge-trapping layers intercalated by an Al{sub 2}O{sub 3} layer. The charge-trapping mechanism in the memory device is mainly ascribed to the generation of the electron-occupied defect level in the band gap of Al{sub 2}O{sub 3} induced by the inter-diffusion between TiO{sub 2} and Al{sub 2}O{sub 3}.
Authors:
; ; ; ; ; ; ; ; ;  [1] ; ;  [2]
  1. National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
  2. National Laboratory of Solid State Microstructures, and Department of Physics, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22303912
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CLATHRATES; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC POTENTIAL; ELECTRONS; LAYERS; MEMORY DEVICES; P-TYPE CONDUCTORS; SILICON; SILICON OXIDES; THICKNESS; TITANIUM OXIDES; TRAPPING