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Title: Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.
Authors:
; ; ; ;  [1]
  1. Components Research and Portland Technology Development, Intel Corp., Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
22303896
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRITICAL CURRENT; ELECTRIC POTENTIAL; ENERGY LOSSES; EQUATIONS; EQUIPMENT; MAGNETIZATION; MAGNETOSTRICTION; MEMORY DEVICES; NOISE; PIEZOELECTRICITY; RANDOMNESS; ROTATION; SIMULATION; SPIN; STRAINS; TORQUE