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Title: Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [1] ; ; ; ; ; ;  [3] ;  [4] ; ; ; ;  [5]
  1. Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble (France)
  2. (France)
  3. Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble (France)
  4. Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, Université de Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne (France)
  5. Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054 (United States)
Publication Date:
OSTI Identifier:
22303890
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ASPECT RATIO; BUFFERS; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DEFECTS; DISLOCATIONS; GALLIUM ARSENIDES; INDIUM COMPOUNDS; LAYERS; MOSFET; N-TYPE CONDUCTORS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS; QUANTUM WELLS; SILICON; SILICON OXIDES; SURFACES; TRAPPING