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Title: Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.
Authors:
;  [1] ;  [2] ;  [3] ; ;  [4] ;  [3] ;  [5] ;  [6] ;  [2] ;  [3] ;  [3]
  1. Institute Center for Microsystems-iMicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology, Abu Dhabi (United Arab Emirates)
  2. Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)
  3. (Turkey)
  4. UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey)
  5. Department of Physics, Marmara University, 34722 Istanbul (Turkey)
  6. Department of Physics, Georgia State University, Atlanta, Georgia 30303 (United States)
Publication Date:
OSTI Identifier:
22303872
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; CHANNELING; CONFINEMENT; DEPOSITION; ELECTRIC POTENTIAL; ELECTRONS; HYSTERESIS; INDIUM NITRIDES; LAYERS; NANOPARTICLES; SPUTTERING; TRAPPING; ZINC OXIDES