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Title: Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [1] ;  [3] ;  [3] ;  [1] ;  [3] ;  [3]
  1. Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia)
  2. (France)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
22303870
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CURRENTS; DIFFUSION; ENCAPSULATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHOSPHORUS; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SILICON; SPECTROSCOPY; SURFACES; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT