skip to main content

Title: Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.
Authors:
; ; ;  [1] ; ;  [2]
  1. Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan)
  2. Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)
Publication Date:
OSTI Identifier:
22303860
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CARRIERS; CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON MOBILITY; EMISSION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HARMONIC GENERATION; SCHOTTKY EFFECT; STRESSES; TRAPPING; TRAPS; TWO-DIMENSIONAL CALCULATIONS