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Title: High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge crystals on flexible-plastic directly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p-type conductions. Here, hole concentrations are 2.2 × 10{sup 17} and 5.8 × 10{sup 20} cm{sup −3} for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and Al in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160 cm{sup 2} V{sup −1} s{sup −1}) compared with AIC-Ge (37 cm{sup 2} V{sup −1} s{sup −1}). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.
Authors:
 [1] ;  [2] ; ; ; ;  [1]
  1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22303859
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; CARRIER MOBILITY; CONCENTRATION RATIO; CRYSTALLIZATION; CRYSTALS; ECOLOGICAL CONCENTRATION; ELECTRICAL PROPERTIES; GERMANIUM; GOLD; HOLE MOBILITY; HOLES; NUCLEATION; ORIENTATION; SEMICONDUCTOR MATERIALS; SOLUBILITY