Is light-induced degradation of a-Si:H/c-Si interfaces reversible?
Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.
- École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Maladière 71, CH-2000 Neuchâtel (Switzerland)
- Publication Date:
- OSTI Identifier:
- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
- Country of Publication:
- United States
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CRYSTAL DEFECTS; CRYSTALS; EVOLUTION; FILMS; HYDROGEN ADDITIONS; HYDROGENATION; INTERFACES; SILICON; STABILITY; SURFACES; VISIBLE RADIATION