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Title: GeTe sequences in superlattice phase change memories and their electrical characteristics

We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb{sub 2}Te{sub 3}] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [2] ;  [4]
  1. Low-Power Electronics Association and Projects (LEAP), Onogawa 16-1, Tsukuba, Ibaraki 305-8569 (Japan)
  2. Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22303855
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY TELLURIDES; ELECTRICAL PROPERTIES; FILMS; GERMANIUM TELLURIDES; MEMORY DEVICES; PHASE TRANSFORMATIONS; SPECTRA; SUPERLATTICES; X-RAY DIFFRACTION