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Title: Precipitation control and activation enhancement in boron-doped p{sup +}-BaSi{sub 2} films grown by molecular beam epitaxy

Precipitation free boron (B)-doped as-grown p{sup +}-BaSi{sub 2} layer is essential for the BaSi{sub 2} p-n junction solar cells. In this article, B-doped p-BaSi{sub 2} layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (T{sub S}) and B temperature (T{sub B}) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 10{sup 19 }cm{sup −3} at room temperature for T{sub S} = 600 and T{sub B} = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the T{sub S} was raised to 650 °C and the T{sub B} was decreased to 1350 °C, the p reached 6.8 × 10{sup 19 }cm{sup −3}, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [1] ;  [3]
  1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  2. Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22303853
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM SILICATES; BORON ADDITIONS; CRYSTAL GROWTH; DOPED MATERIALS; FILMS; HOLES; LAYERS; MOLECULAR BEAM EPITAXY; P-N JUNCTIONS; PRECIPITATION; SOLAR CELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY