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Title: High quality semipolar (11{sup ¯}02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities

Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (11{sup ¯}02) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c-plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in (11{sup ¯}02) AlGaN/AlN QWs than in c-plane QWs. Thus, (11{sup ¯}02) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
  2. JFE Mineral Co. Ltd., Chiba 260-0826 (Japan)
Publication Date:
OSTI Identifier:
22303852
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CRYSTAL GROWTH; ELECTRIC FIELDS; GALLIUM COMPOUNDS; INTERFACES; LIFETIME; LINE WIDTHS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PROBABILITY; QUANTUM WELLS; SPECTROSCOPY; SUBSTRATES; SURFACES; TIME RESOLUTION; ULTRAVIOLET RADIATION