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Title: Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions.
Authors:
 [1] ;  [2]
  1. Graduate School of Mechanical Engineering, Hanyang University, Seoul 133–791 (Korea, Republic of)
  2. School of Mechanical Engineering, Hanyang University, Seoul 133–791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22303844
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FORECASTING; HEAT TRANSFER; LASER RADIATION; LASER SPECTROSCOPY; NUMERICAL ANALYSIS; OPTICAL MICROSCOPES; SCATTERING; SILICON; SLIP; STRESSES; SURFACES; TEMPERATURE DEPENDENCE; THERMOELASTICITY; VISIBLE RADIATION