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Title: Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.
Authors:
; ; ; ;  [1]
  1. Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)
Publication Date:
OSTI Identifier:
22303843
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BENCHMARKS; DAMAGE; DEPOSITION; DIELECTRIC MATERIALS; ENCAPSULATION; EQUIPMENT; LAYERS; STABILITY; STRESSES; THIN FILMS; TIN ADDITIONS; TRANSISTORS; ZINC OXIDES; ZIRCONIUM OXIDES