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Title: High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 μm. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at −300 mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm{sup 2}, it provided a specific detectivity of 1.4 × 10{sup 10} Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.
Authors:
; ; ; ;  [1]
  1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22303835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY COMPOUNDS; CURRENT DENSITY; DETECTION; ELECTRIC POTENTIAL; EQUIPMENT; GALLIUM ANTIMONIDES; ILLUMINANCE; INDIUM ARSENIDES; INFRARED RADIATION; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SUBSTRATES; SUPERLATTICES; TEMPERATURE RANGE 0013-0065 K; WAVELENGTHS