skip to main content

SciTech ConnectSciTech Connect

Title: Hole-transport material variation in fully vacuum deposited perovskite solar cells

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH{sub 3}NH{sub 3}PbI{sub x−3}Cl{sub x} perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.
Authors:
; ; ; ; ;  [1]
  1. Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden (Germany)
Publication Date:
OSTI Identifier:
22303733
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 8; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; DEPOSITS; EFFICIENCY; ELECTRIC POTENTIAL; ENERGY LEVELS; EV RANGE; PEROVSKITE; SOLAR CELLS