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Title: Advanced Si solid phase crystallization for vertical channel in vertical NANDs

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.
Authors:
 [1] ;  [1] ;  [2] ; ;  [3] ;  [1] ;  [2]
  1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22303730
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 7; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLIZATION; EPITAXY; GERMANIUM SILICIDES; HEATING; LAYERS; MICROSTRUCTURE; NUCLEATION; SOLIDS; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY