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Title: Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1] ;  [5]
  1. Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland)
  2. Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland)
  3. (EPFL), Lausanne (Switzerland)
  4. Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)
  5. (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)
Publication Date:
OSTI Identifier:
22303576
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ALUMINIUM; DEPOSITION; DOPED MATERIALS; HYDROGEN; INDIUM; PLASMA; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; ZINC