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Title: Sodium diffusion in 4H-SiC

Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 °C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC.
Authors:
;  [1]
  1. Integrated Devices and Circuits, KTH Royal Institute of Technology, Electrum 229, SE-164 40 Kista (Sweden)
Publication Date:
OSTI Identifier:
22303573
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; DIFFUSION; HEAT TREATMENTS; MASS SPECTROSCOPY; MOBILITY; SILICON CARBIDES; SODIUM