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Title: The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Silicon atoms deposited on Ag(111) produce various single layer silicene sheets with different buckling patterns and periodicities. Low temperature scanning tunneling microscopy reveals that one of the silicene sheets, the hypothetical √7 × √7 silicene structure, on 2√3 × 2√3 Ag(111), is inherently highly defective and displays no long-range order. Moreover, Auger and photoelectron spectroscopy measurements reveal its sudden death, to end, in a dynamic fating process at ∼300 °C. This result clarifies the real nature of the 2√3 × 2√3R(30°) silicene phase and thus helps to understand the diversity of the silicene sheets grown on Ag(111)
Authors:
; ; ;  [1] ;  [2] ;  [3] ; ; ;  [4] ;  [5] ;  [6]
  1. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
  2. (China)
  3. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin (Germany)
  4. CNR-ISM, via Fosso del Cavaliere, Rome 00133 (Italy)
  5. ISAC-CNR, via Fosso del Cavaliere 100, Rome (Italy)
  6. Aix-Marseille Université, CNRS, PIIM UMR 7345, 13397, Marseille (France)
Publication Date:
OSTI Identifier:
22303567
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; PERIODICITY; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER 111; TEMPERATURE RANGE 0065-0273 K