skip to main content

Title: Enhanced thermoelectric performance of In-substituted GeSb{sub 6}Te{sub 10} with homologous structure

We studied the crystal structure and thermoelectric properties of polycrystalline GeIn{sub x}Sb{sub 6−x}Te{sub 10} (x = 0, 0.18, 0.3, and 0.6). Rietveld and Le Bail analyses showed that all compositions crystallized in trigonal structures with a 51-layer period. Substituting In decreased both the lattice and electronic thermal conductivity, as well as markedly increased the Seebeck coefficient. We ascribed this increase to increases in the effective mass of the carriers, likely caused by the formation of additional energy states near the Fermi level. In GeIn{sub 0.6}Sb{sub 5.4}Te{sub 10}, we found a maximum ZT of 0.75 at 710 K, 1.9 times higher than that of GeSb{sub 6}Te{sub 10}.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [3] ; ;  [4] ;  [4] ;  [2]
  1. Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai 599-8570 (Japan)
  2. (Japan)
  3. Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology, Ikeda 563-8577 (Japan)
  4. Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Sakai 599-8531 (Japan)
Publication Date:
OSTI Identifier:
22303556
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 8; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; EFFECTIVE MASS; FERMI LEVEL; POLYCRYSTALS; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES