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Title: Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study

We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (∼0.91 mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700 nm–900 nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (∼0.16 mA/cm{sup 2}) from the wavelength range of 900 nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700 nm–900 nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.
Authors:
; ; ;  [1] ; ;  [2]
  1. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)
  2. Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)
Publication Date:
OSTI Identifier:
22303545
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAVITY RESONATORS; CURRENTS; EFFICIENCY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; EPITAXY; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERMEDIATE STATE; LAYERS; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; SIMULATION; SOLAR CELLS; SUBSTRATES; THIN FILMS; VISIBLE RADIATION; WAVELENGTHS