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Title: Au-gated SrTiO{sub 3} field-effect transistors with large electron concentration and current modulation

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO{sub 3} thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO{sub 3}. As a result of the large dielectric constant of SrTiO{sub 3} and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ∼1.6 × 10{sup 14 }cm{sup −2} electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ∼68 mA/mm, ∼20× times larger than the best demonstrated SrTiO{sub 3} MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO{sub 3} in increasing the pinch off voltage of the MESFET.
Authors:
;  [1] ; ;  [2]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22303538
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; CURRENTS; DIFFUSION BARRIERS; ELECTRON DENSITY; ELECTRONS; FIELD EFFECT TRANSISTORS; LAYERS; METALS; MODULATION; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES; THIN FILMS