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Title: Suspended InAs nanowire gate-all-around field-effect transistors

Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I{sub on} of ∼10 μA and an on-off current ratio I{sub on}/I{sub off} of as high as 10{sup 6} at source-drain bias voltage of 50 mV and gate length of 1 μm with a gate underlap spacing of 1 μm from the source and from the drain. At low temperatures, the on-state current I{sub on} is only slightly reduced, while the ratio I{sub on}/I{sub off} is increased to 10{sup 7}. The field-effect mobility in the nanowire channels is also investigated and found to be ∼1500 cm{sup 2}/V s at room temperature and ∼2000 cm{sup 2}/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires.
Authors:
; ;  [1] ; ;  [2] ;  [1] ;  [3]
  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
  2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  3. (Sweden)
Publication Date:
OSTI Identifier:
22303532
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER MOBILITY; CARRIERS; CONFINEMENT; CURRENTS; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NANOWIRES; QUANTUM WIRES; TEMPERATURE RANGE 0273-0400 K