In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

Journal Article · Mon Sep 15 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896141· OSTI ID:22303515

Liu, Xi ^[1]; Thadesar, Paragkumar A.; Oh, Hanju; Bakir, Muhannad S. ^[2]; Taylor, Christine L.; Sitaraman, Suresh K. ^[1]; Kunz, Martin; Tamura, Nobumichi ^[3]

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1. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
3. Advanced Light Source, Lawrence Berkeley National Laboratory Berkeley, California 94720 (United States)

In-situ microscale thermomechanical strain measurements have been performed in combination with synchrotron x-ray microdiffraction to understand the fundamental cause of failures in microelectronics devices with through-silicon vias. The physics behind the raster scan and data analysis of the measured strain distribution maps is explored utilizing the energies of indexed reflections from the measured data and applying them for beam intensity analysis and effective penetration depth determination. Moreover, a statistical analysis is performed for the beam intensity and strain distributions along the beam penetration path to account for the factors affecting peak search and strain refinement procedure.

• OSTI ID: 22303515
• Journal Information: Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
DATA ANALYSIS
DISTRIBUTION
EQUIPMENT
FAILURES
MICROELECTRONICS
PENETRATION DEPTH
REFLECTION
SILICON
STRAINS
SYNCHROTRON RADIATION
X RADIATION